| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4920DY from On Semiconductor is a dual N-channel MOSFET suitable for various electronic applications. It is designed with a 30V drain-source voltage rating and offers a low on-state resistance of 28mΩ at 6A and 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and is packaged in an 8-SOIC surface-mount case. Key electrical characteristics include a gate threshold voltage of 3V (max) at 250µA and a gate charge of 13nC (max) at 5V.
The device supports logic-level gate operation and features fast switching times, with turn-on delay of 20ns and turn-off delay of 90ns. It is also compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
Applications for the SI4920DY include general-purpose switching, driver circuits, and battery-operated systems where efficient power control is required. Its dual-channel configuration and surface-mount package make it versatile for integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6.9A at 25°C.
0.025Ω maximum at VGS=10V, ID=6.9A.
1V maximum.
-55°C to 150°C.
8-SOIC surface mount package.
Yes, it is halogen-free.