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SI4916DY-T1GE3 The SI4916DY-T1GE3 is a Dual N-Channel MOSFET Array from Vishay Siliconix. It features a 30V Drain to Source Voltage and 4.8A Continuous Drain Current.
Mfr Part #:

SI4916DY-T1GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The SI4916DY-T1GE3 is a Dual N-Channel MOSFET Array from Vishay Siliconix. It features a 30V Drain to Source Voltage and 4.8A Continuous Drain Current.
✓ Total Stock: 200,000 pcs
$ Price Range: $1.64

SI4916DY-T1GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
200,000 pcs
On Request
200000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI4916DY-T1GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Style
Operating Temperature
Power Dissipation
Tape & Reel
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SI4916DY-T1GE3 Description

Short technical summary and product information.

The SI4916DY-T1GE3 is a Dual N-Channel MOSFET Array manufactured by Vishay Siliconix. This component is designed for various electronic applications requiring efficient switching and power management.

 

Key electrical characteristics include a Drain to Source Voltage (Vds) of 30V and a Continuous Drain Current (Ids) of 4.8A. The on-state resistance (Rds) is specified at 40mΩ, indicating low conduction losses. The device also has a Gate to Source Breakdown Voltage of ±12V.

 

Packaged in an 8-SOIC surface mount case, the SI4916DY-T1GE3 operates within a temperature range of -55°C to 150°C. Its Power Dissipation is rated at 1.25W. The component is supplied on tape and reel for automated assembly processes.

 

This MOSFET array is suitable for applications where space is a constraint and high performance is required. Its robust design and specifications make it a reliable choice for power switching and control circuits.

SI4916DY-T1GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel MOSFET Array
Subcategory: Array

SI4916DY-T1GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4916DY-T1GE3 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4916DY-T1GE3 Features

  • Dual N-Channel MOSFET Array
  • 30V Drain to Source Voltage
  • 4.8A Continuous Drain Current
  • 40mΩ On-State Resistance
  • 8-SOIC Surface Mount Package

SI4916DY-T1GE3 Applications

  • Power switching applications
  • Motor control circuits
  • Power management solutions
  • General purpose switching

SI4916DY-T1GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SI4916DY-T1GE3?

The drain-to-source voltage (Vds) is 30V.

What is the continuous drain current rating?

The continuous drain current (Ids) is 4.8A.

What is the on-resistance of this MOSFET array?

The drain-to-source on-resistance (Rds(on)) is 40 mΩ typical.

What is the power dissipation capability?

The power dissipation is 1.25W.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the gate-to-source breakdown voltage?

The gate-to-source breakdown voltage is ±12V.

What package type does the SI4916DY-T1GE3 use?

The package is SOIC-8 with surface-mount mounting.

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