| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,280 pcs
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2280 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4914DY-T1-E3 is a dual N-channel MOSFET featuring an integrated Schottky diode, designed for applications requiring efficient power switching. This component operates with a 30V drain-source voltage and offers low on-state resistance, with a typical value of 23mOhm at 7A and 10V Vgs.
It provides two N-channel MOSFETs in a single package, configured as a half-bridge. The device supports a continuous drain current of up to 5.7A and has a maximum gate threshold voltage of 2.5V at 250µA. The integrated Schottky diode has a forward voltage of 0.40V at 1.0A.
Packaged in an 8-SOIC surface-mount configuration, the SI4914DY-T1-E3 is suitable for various electronic designs. It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation capability of up to 1.16W. The MOSFETs are designed with a logic-level gate for compatibility with lower voltage control signals.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 5.7A.
The package type is 8-SOIC.
The operating junction temperature range is -55°C to 150°C.
Yes, it features a logic level gate.
The maximum on-resistance is 23mOhm at VGS = 10V and ID = 7A.
The maximum gate threshold voltage is 2.5V at ID = 250µA.