| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,826 pcs
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4826 pcs | On Request | 1 | On Request | On Request | 0935+ | On Request | On Request |
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| Halogen Free | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SI4914BDY-T1-E3 is a dual N-channel MOSFET featuring an integrated Schottky diode, designed for applications like notebook PC system power dc-to-dc conversion. This device operates with a 30V drain-source voltage and offers low on-state resistance, with a maximum of 21mΩ at 8A and 10V gate-source voltage.
Key electrical characteristics include a gate threshold voltage of 2.7V maximum at 250µA and a gate charge of 10.5nC maximum at 4.5V. The MOSFET is rated for a continuous drain current of 8.4A and a maximum power dissipation of 2.7W at 25°C.
Packaged in an 8-SOIC surface-mount case, the SI4914BDY-T1-E3 operates within a temperature range of -55°C to 150°C. It is compliant with RoHS 3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum gate threshold voltage is 2.7V at 250µA.
The maximum continuous drain current is 8.4A.
The Rds On is a maximum of 21mΩ at 8A and 10V.
The operating temperature range is -55°C to 150°C.
The package type is 8-SOIC.
Yes, this product is RoHS 3 compliant.