| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4913DY-T1-E3 is a dual P-channel MOSFET suitable for various electronic applications. This component features a drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 7.1A.
Key electrical characteristics include a maximum on-resistance (Rds On) of 15mOhm at 9.4A and 4.5V, and a gate charge (Qg) of 65nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 500µA. It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 1.1W.
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and is designed with a logic level gate. It is configured as two P-channel transistors within a single package.
The SI4913DY-T1-E3 comes in an 8-SOIC package and is designed for surface mounting. Its compact size and surface mount capability make it suitable for integration into space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V
7.1A
15mOhm at 9.4A, 4.5V
65nC maximum at 4.5V
1V maximum at 500µA
1.1W
-55°C to 150°C junction temperature
8-SOIC surface-mount package