| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,690 pcs
|
2690 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,463 pcs
|
1463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
663 pcs
|
663 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4909DY-T1-GE3 is a Dual P-Channel MOSFET designed for load switching applications. It offers a drain-source voltage of 40V and a maximum continuous drain current of 8A at 25°C. The MOSFET exhibits a low on-resistance of 0.027 Ohms at 10V gate-source voltage, ensuring efficient power delivery.
Key electrical characteristics include a gate charge of 21.7nC typical and a gate threshold voltage of 2.5V maximum. The device operates within a junction temperature range of -55°C to +150°C. It is housed in an 8-SOIC package suitable for surface mounting.
Applications for this MOSFET include load switches in notebook PCs and desktop PCs. Its TrenchFET® power MOSFET technology and 100% Rg and UIS tested status highlight its suitability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -40V.
The device comes in an 8-SOIC surface mount package.
The junction and storage temperature range is -55°C to +150°C.
The maximum continuous drain current is -8A at a case temperature of 25°C.
The maximum on-resistance is 27 mOhm at VGS = -10V and ID = 8A.
The maximum gate threshold voltage is 2.5V at ID = 250 µA.
It is a dual P-Channel MOSFET.