| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
905 pcs
|
905 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4906DY-T1-E3 is a dual N-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current of 6.6A. The MOSFET exhibits a maximum on-resistance (Rds On) of 39mOhm at 5A and 10V, with a gate charge (Qg) of 22nC at 10V.
The device operates within a temperature range of -55°C to 150°C (TJ). Its input capacitance (Ciss) is rated at 625pF maximum at 20V. The gate threshold voltage (Vgs(th)) is a maximum of 2.2V at 250µA. The power dissipation capability is 3.1W.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, this MOSFET is designed for surface mounting. The technology employed is MOSFET (Metal Oxide). It is listed as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected, though these compliance statuses are unverified.
This component is suitable for applications requiring efficient switching and power control within its specified parameters. Its dual N-channel configuration allows for flexible circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
6.6A.
39mOhm at 5A drain current and 10V gate drive.
2.2V at 250µA drain current.
22nC at 10V gate drive.
-55°C to 150°C (junction).
8-SOIC (0.154", 3.90mm Width), surface mount.