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32,873 pcs
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32873 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI4904DY-T1-GE3 is a dual N-channel MOSFET array from Vishay Dale, designed for medium-voltage switching applications. It features a drain-source breakdown voltage of 40V and a continuous drain current rating of 8A at 25°C case temperature. The device offers low on-state resistance of 0.016Ω maximum at VGS = 10V and ID = 5A, and 0.019Ω maximum at VGS = 4.5V and ID = 4A, enabling efficient power handling.
With a typical gate charge of 85nC and input capacitance of 2390pF, this MOSFET is suitable for moderate-speed switching circuits. The maximum power dissipation is 3.25W at 25°C case temperature. The device operates over a junction temperature range of -55°C to 150°C.
The part is housed in an 8-SOIC surface-mount package, making it suitable for compact PCB designs. It is commonly used in power management, DC-DC conversion, and load switching applications where two independent N-channel MOSFETs are required.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 40V at VGS = 0V and ID = 250 µA.
The continuous drain current is 8A at TC = 25°C and 6.5A maximum at TA = 70°C.
The maximum drain-source on-state resistance is 0.016Ω at VGS = 10V and ID = 5A, and 0.019Ω at VGS = 4.5V and ID = 4A.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 2V at ID = 250 µA.