| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
|
212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4904DY-T1-E3 is a dual N-channel MOSFET featuring TrenchFET technology. It is rated for a 40V drain-source voltage and can handle a continuous drain current of up to 8A at 25°C case temperature. The MOSFET exhibits a low on-state resistance (Rds On) of 16mOhm at 5A and 10V gate-source voltage, and 19mOhm at 4A and 4.5V gate-source voltage. Its input capacitance is 2390pF, output capacitance is 270pF, and reverse transfer capacitance is 165pF, all measured at 1MHz. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is available in an 8-SOIC package suitable for surface mounting. It has a maximum power dissipation of 3.25W at 25°C case temperature and 2.0W at 25°C ambient temperature. The device is halogen-free and compliant with RoHS3 standards. Applications include CCFL inverters.
Key electrical characteristics include a gate threshold voltage of 2.0V maximum at 250µA and a gate charge of 85nC typical at 10V. The device is 100% R g and UIS tested, ensuring reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V minimum at VGS=0V, ID=250µA.
The continuous drain current is 8A maximum at TC=25°C, and 6.5A at TA=70°C.
The maximum on-resistance is 16mΩ at VGS=10V, ID=5A, and 19mΩ at VGS=4.5V, ID=4A.
The operating junction and storage temperature range is -55°C to 150°C.
The device is offered in an 8-SOIC surface-mount package.
The maximum gate threshold voltage is 2.0V at VDS=VGS, ID=250µA.
The typical total gate charge is 85nC at VDS=20V, VGS=10V.