SI4896DY-T1-GE3 The Vishay SI4896DY-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers an 80V drain-source voltage and a continuous drain current of 6.7A.
Mfr Part #:

SI4896DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI4896DY-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers an 80V drain-source voltage and a continuous drain current of 6.7A.
✓ Total Stock: 18,520 pcs
$ Price Range: $0.99

SI4896DY-T1-GE3 Available from 1 distributor

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SI4896DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4896DY-T1-GE3 Description

Short technical summary and product information.

The Vishay SI4896DY-T1-GE3 is an N-Channel MOSFET from the TrenchFET power MOSFET family. It is designed to handle a maximum drain-source voltage of 80V and can sustain a continuous drain current of 6.7A at 25°C ambient temperature.

 

This MOSFET features a low on-state resistance of 16.5mOhm at a gate-source voltage of 10V and a drain current of 10A. The gate threshold voltage is typically 2V at 250µA. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.56W at 25°C.

 

The device is housed in an 8-SOIC surface-mount package, making it suitable for various electronic designs. It is compliant with RoHS3 standards and is halogen-free, indicating a commitment to environmental regulations.

 

Key electrical characteristics include a gate charge of 41nC at 10V and a gate-source voltage range of ±20V. The MOSFET technology ensures efficient power switching and management in demanding applications.

SI4896DY-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si4
Canonical Name: Vishay Siliconix SI4896DY N-Channel 80V Power MOSFET
Subcategory: N-Channel

SI4896DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4896DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4896DY-T1-GE3 Features

  • 80V drain-source breakdown voltage.
  • 6.7A continuous drain current.
  • Low 16.5mOhm Rds On resistance.
  • N-Channel MOSFET technology.
  • Surface mount 8-SOIC package.

SI4896DY-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converters.
  • Used in power management systems.
  • Applicable in load switch designs.

SI4896DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4896DY-T1-GE3?

The maximum drain-source voltage is 80V.

What is the continuous drain current of the SI4896DY-T1-GE3?

The continuous drain current is 6.7A at 25°C ambient temperature.

What is the on-state resistance (Rds On) for this MOSFET?

The maximum Rds On is 16.5mOhm at 10A drain current and 10V gate-source voltage.

What is the operating temperature range for the SI4896DY-T1-GE3?

The operating temperature range is -55°C to 150°C.

What package type is the SI4896DY-T1-GE3 supplied in?

It is supplied in an 8-SOIC package for surface mounting.

Is the SI4896DY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI4896DY-T1-GE3 halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21 definition.

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