| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
366 pcs
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366 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI4894BDY-T1-GE3 is a high-performance N-Channel MOSFET belonging to the TrenchFET® series. It features a drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 8.9A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 11mOhm at 12A and 10V gate-source voltage, ensuring efficient power transfer.
Designed for surface mounting, this component comes in a standard 8-SOIC package with dimensions of 0.154" (3.90mm) width. Its operating temperature range is -55°C to 150°C (TJ), making it suitable for demanding environments. Key electrical characteristics include an input capacitance (Ciss) of 1580 pF at 15V and a gate charge (Qg) of 38 nC at 10V.
This MOSFET is ideal for applications requiring efficient switching and power management. Its robust construction and specified parameters make it a reliable choice for electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The continuous drain current is 8.9A at 25°C ambient temperature.
The maximum on-resistance is 11mOhm at a drain current of 12A and gate-source voltage of 10V.
It is available in an 8-SOIC surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 3V at a drain current of 250µA.
The maximum input capacitance is 1580pF at a drain-source voltage of 15V.