SI4894BDY-T1-E3 The Vishay Dale SI4894BDY-T1-E3 is an N-Channel MOSFET designed for various applications. It features a 30V drain-source voltage and a continuous drain current of 8.9A.
Mfr Part #:

SI4894BDY-T1-E3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4894BDY-T1-E3 is an N-Channel MOSFET designed for various applications. It features a 30V drain-source voltage and a continuous drain current of 8.9A.
✓ Total Stock: 360,491 pcs
$ Price Range: $0.99

SI4894BDY-T1-E3 Available from 7 distributors

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✓ Non-Authorised

SI4894BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4894BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4894BDY-T1-E3 is a single N-Channel MOSFET with a drain-source voltage rating of 30V and a continuous drain current capability of 8.9A at ambient temperature.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is designed for surface mount applications, housed in an 8-SOIC package. Key electrical characteristics include a maximum on-resistance of 11mOhm at 12A and 10V gate-source voltage, a gate charge of 38nC at 10V, and a gate threshold voltage of 3V at 250µA.

 

It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.4W at ambient temperature. The device supports gate drive voltages between 4.5V and 10V for optimal Rds On performance.

 

Compliance information indicates RoHS3 compliance and Moisture Sensitivity Level 1 (Unlimited). The REACH status is unaffected.

SI4894BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4894BDY-T1-E3 N-Channel MOSFET
Subcategory: Single

SI4894BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4894BDY-T1-E3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4894BDY-T1-E3 Features

  • 30V drain-source voltage rating.
  • 8.9A continuous drain current.
  • Low 11mOhm on-resistance.
  • Surface mount 8-SOIC package.
  • Wide -55°C to 150°C operating temperature.

SI4894BDY-T1-E3 Applications

  • Suitable for power switching circuits.
  • Used in general purpose electronics.
  • Ideal for space-constrained designs.
  • Efficient for low-voltage applications.

SI4894BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4894BDY-T1-E3?

The drain-source voltage (Vdss) is 30 V.

What is the continuous drain current of the SI4894BDY-T1-E3?

The continuous drain current is 8.9 A at ambient temperature.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 11 mOhm when the drain current is 12A and the gate-source voltage is 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4894BDY-T1-E3 in?

It is in an 8-SOIC package designed for surface mounting.

Is the SI4894BDY-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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