| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150,667 pcs
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150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Siliconix SI4892DY-T1-E3 is a single N-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8.8A at 25°C.
The MOSFET has a low on-resistance (Rds On) of 12mOhm at 12.4A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 800mV at 250µA. The maximum gate-source voltage is ±20V, and the gate charge (Qg) is 10.5nC at 5V.
Operating within a temperature range of -55°C to 150°C (TJ), this device has a maximum power dissipation of 1.6W. It utilizes MOSFET (Metal Oxide) technology and is housed in an 8-SOIC package, suitable for surface mounting.
The SI4892DY-T1-E3 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. It is supplied in Tape & Reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to150°C (junction).
10.5nC at Vgs =5V.
12mOhm at Id =12.4A, Vgs =10V.
800mV at Id =250µA (minimum).
8.8A at ambient temperature of25°C.