| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale Si4890DY is an N-Channel TrenchFET Power MOSFET designed for high-efficiency PWM applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 11A at 25°C ambient temperature.
This MOSFET offers a low on-state resistance of 12mΩ at 11A and 10V Vgs, and 20mΩ at 9A and 4.5V Vgs. The gate charge is specified at 20 nC maximum at 5V Vgs. The device operates over a temperature range of -55°C to 150°C.
Packaged in an 8-SOIC surface-mount package, the Si4890DY is suitable for various power management applications. It is RoHS compliant and Halogen-free, meeting stringent environmental standards.
Key electrical characteristics include a gate threshold voltage of 0.8V (min) at 250µA and a maximum power dissipation of 2.5W at 25°C. The fast switching capability and reduced Qg make it ideal for efficient power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 11A at 25°C ambient temperature.
The on-state resistance is a maximum of 12mΩ at 11A drain current and 10V gate-source voltage.
The SI4890DY-T1-E3 is supplied in an 8-SOIC package.
The operating temperature range is -55°C to 150°C.
Yes, the SI4890DY-T1-E3 is RoHS3 Compliant.
Yes, the SI4890DY-T1-E3 is Halogen-free.