SI4890DY-T1-E3 The Vishay Dale SI4890DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous drain current. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4890DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4890DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous drain current. It is supplied in an 8-SOIC package.
✓ Total Stock: 452,000 pcs
$ Price Range: $0.99

SI4890DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
452,000 pcs
452000 pcs On Request 1 On Request On Request On Request On Request On Request

SI4890DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SI4890DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale Si4890DY is an N-Channel TrenchFET Power MOSFET designed for high-efficiency PWM applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 11A at 25°C ambient temperature.

 

This MOSFET offers a low on-state resistance of 12mΩ at 11A and 10V Vgs, and 20mΩ at 9A and 4.5V Vgs. The gate charge is specified at 20 nC maximum at 5V Vgs. The device operates over a temperature range of -55°C to 150°C.

 

Packaged in an 8-SOIC surface-mount package, the Si4890DY is suitable for various power management applications. It is RoHS compliant and Halogen-free, meeting stringent environmental standards.

 

Key electrical characteristics include a gate threshold voltage of 0.8V (min) at 250µA and a maximum power dissipation of 2.5W at 25°C. The fast switching capability and reduced Qg make it ideal for efficient power conversion circuits.

SI4890DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Si4890DY N-Channel MOSFET
Subcategory: N-Channel

SI4890DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4890DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4890DY-T1-E3 Features

  • N-Channel TrenchFET Power MOSFET
  • 30V Drain-Source Voltage Rating
  • 11A Continuous Drain Current
  • Low On-State Resistance (12mΩ max)
  • 8-SOIC Surface Mount Package

SI4890DY-T1-E3 Applications

  • High-efficiency PWM applications
  • Power management circuits
  • Switching power supplies
  • DC-DC converters

SI4890DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4890DY-T1-E3?

The maximum drain-source voltage is 30V.

What is the continuous drain current of the SI4890DY-T1-E3?

The continuous drain current is 11A at 25°C ambient temperature.

What is the on-state resistance of the SI4890DY-T1-E3?

The on-state resistance is a maximum of 12mΩ at 11A drain current and 10V gate-source voltage.

What is the package type for the SI4890DY-T1-E3?

The SI4890DY-T1-E3 is supplied in an 8-SOIC package.

What is the operating temperature range of the SI4890DY-T1-E3?

The operating temperature range is -55°C to 150°C.

Is the SI4890DY-T1-E3 RoHS compliant?

Yes, the SI4890DY-T1-E3 is RoHS3 Compliant.

Is the SI4890DY-T1-E3 Halogen-free?

Yes, the SI4890DY-T1-E3 is Halogen-free.

Home
Account

Categories