| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,215 pcs
|
2215 pcs | On Request | 1 | On Request | On Request | 1452+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4888DY-T1-E3 is a single N-Channel MOSFET manufactured by Vishay Dale. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at 25°C. The on-resistance (Rds On) is a maximum of 7mOhm at 16A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 1.6V at 250µA.
This MOSFET utilizes Metal Oxide Semiconductor technology and is designed for surface mounting in an 8-SOIC package. The operating temperature range is -55°C to 150°C (TJ). Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20V and a gate charge (Qg) of 24 nC at 5V. The maximum power dissipation is 1.6W (Ta).
Compliance includes RoHS3 status. The part is supplied in a Tape & Reel (TR) package. Its specifications make it suitable for various power switching applications where efficient and reliable performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction temperature).
11A at 25°C ambient temperature.
7mOhm at 16A drain current and 10V gate drive.
1.6V maximum at 250µA drain current.
24nC at 5V gate-source voltage.