| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,800 pcs
|
7800 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The SI4884DY-T1-E3 from Vishay Dale is a single N-Channel MOSFET. It is designed to handle a maximum drain-source voltage of 30V and can sustain a continuous drain current of up to 16.5A under specific conditions (Vgs = 10V, Tc = 25°C). The MOSFET exhibits a low on-resistance, with a maximum Rds On value of 12 mOhm when tested at Vgs = 10V and Id = 14A.
This component features a gate-source voltage tolerance of up to ±20V. It is housed in a surface-mount SOP-8 package, making it suitable for integration into compact electronic designs. The device is specified with a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions.
Ideal for power switching and amplification circuits, the SI4884DY-T1-E3 provides reliable performance in applications requiring efficient power management. Its N-channel configuration and robust specifications make it a versatile choice for engineers designing power supplies, motor drivers, and other power-sensitive electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 16.5A at Tc=25°C with Vgs=10V.
The maximum on-resistance is 12 mOhm at Vgs=10V and Id=14A.
The device comes in an SOP-8 surface-mount package.
The maximum gate-source voltage is ±20V.