| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,245 pcs
|
1245 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4884BDY-T1-E3 is an N-Channel Power MOSFET designed for efficient power switching applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 16.5A at 25°C case temperature. The MOSFET offers a low on-state resistance (Rds(on)) of 9mΩ at 10A and 10V Vgs, optimizing power efficiency.
This device utilizes TrenchFET technology for improved performance and is PWM optimized. It has a gate charge (Qg) of 35nC maximum at 10V Vgs and an input capacitance (Ciss) of 1525pF maximum at 15V Vds. The operating junction temperature range is from -55°C to 150°C.
The SI4884BDY-T1-E3 is supplied in an 8-SOIC surface mount package, making it suitable for various board-level implementations. Its robust design and specifications make it a reliable choice for power management circuits, load switching, and other general-purpose power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
16.5A at case temperature 25°C.
8-SOIC.
-55°C to 150°C.
3V maximum at ID=250µA.
9mΩ maximum at VGS=10V, ID=10A.
1525pF at VDS=15V.