| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | 1005 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type |
The Vishay Dale Si4884BDY is an N-Channel TrenchFET Power MOSFET with a 30V drain-source breakdown voltage. It is optimized for PWM applications and features low on-state resistance, with a typical value of 0.007Ω at VGS = 10V and ID = 10A. The device also offers a typical continuous drain current of 16.5A at TC = 25°C.
This MOSFET is housed in an SO-8 package and is suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The Si4884BDY is designed with TrenchFET technology for improved performance and efficiency.
Key electrical characteristics include a typical gate-source threshold voltage of 13V, a typical forward transconductance of 45S, and dynamic parameters such as input capacitance of 1525pF and total gate charge of 23.5nC.
This component is available in lead-free and halogen-free options, adhering to environmental standards. Its robust design makes it suitable for various industrial and consumer electronics applications requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The typical gate-source threshold voltage is 13 V.
The typical drain-source on-state resistance is 0.007 Ω.
The typical drain-source on-state resistance is 0.0095 Ω.
The typical continuous drain current is 16.5 A.
The maximum power dissipation is 4.45 W.
The operating junction and storage temperature range is -55 to 150 °C.