| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay SI4874BDY-T1-GE3 is a single N-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V and a continuous drain current (ID) of 12A. It features a low on-resistance of 7mOhm at 16A and 10Vgs, making it suitable for power switching applications.
The MOSFET is housed in a standard 8-SOIC package and is designed for surface mounting. Its operating temperature range is -55°C to 150°C (TJ). The input capacitance (Ciss) is 3230 pF at 15V, and the gate charge (Qg) is 25 nC at 4.5V.
This component utilizes Metal Oxide Semiconductor (MOSFET) technology. It is rated for a maximum power dissipation of 1.6W (Ta) and has a gate-to-source voltage (Vgs) limit of ±20V. The gate threshold voltage (Vgs(th)) is 3V at 250µA.
The SI4874BDY-T1-GE3 is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its surface mount design and robust electrical characteristics make it a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
3V at 250µA.
7mOhm at 16A, 10V gate drive.
12A at ambient temperature.
25nC at 4.5V.