SI4874BDY-T1-E3 The Vishay Dale SI4874BDY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 12A. It features a low on-resistance of 7mOhm at 16A and 10V.
Mfr Part #:

SI4874BDY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4874BDY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 12A. It features a low on-resistance of 7mOhm at 16A and 10V.
✓ Total Stock: 119,995 pcs
$ Price Range: $0.99

SI4874BDY-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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115,000 pcs
115000 pcs On Request 1 On Request On Request On Request On Request On Request
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2,910 pcs
2910 pcs On Request 1 On Request On Request 1037 On Request 2026-05-08 04:17:47
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2,085 pcs
2085 pcs On Request 1 On Request On Request 18+ On Request On Request

SI4874BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4874BDY-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI4874BDY-T1-E3 is an N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 12A at ambient temperature.

 

The MOSFET exhibits a low on-resistance (Rds On) of 7mOhm when measured at 16A drain current and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 3V at 250µA, and the maximum gate-source voltage is ±20V. Key electrical parameters include an input capacitance (Ciss) of 3230 pF at 15V and a gate charge (Qg) of 25 nC at 4.5V.

 

With a maximum power dissipation of 1.6W at ambient temperature, this device is suitable for various power management tasks. It operates within a temperature range of -55°C to 150°C (TJ).

 

The SI4874BDY-T1-E3 is provided in a surface mount 8-SOIC package (0.154", 3.90mm Width). It is classified as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected.

SI4874BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4874BDY-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI4874BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4874BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4874BDY-T1-E3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 12A at ambient temperature.
  • Low on-resistance of 7mOhm at 16A, 10V.
  • Surface mount 8-SOIC package.
  • Operating temperature range -55°C to 150°C.

SI4874BDY-T1-E3 Applications

  • Suitable for power switching applications.
  • Used in power management circuits.
  • Ideal for high-current switching tasks.
  • Efficient for low-voltage power designs.

SI4874BDY-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4874BDY-T1-E3?

The drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current of the SI4874BDY-T1-E3?

The continuous drain current is 12A at ambient temperature.

What is the maximum on-resistance for this MOSFET?

The Rds On is a maximum of 7mOhm at 16A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4874BDY-T1-E3 in?

It is in an 8-SOIC package designed for surface mounting.

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