| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,852 pcs
|
4852 pcs | On Request | 1 | On Request | On Request | 1228 | On Request | On Request | |
|
1,086 pcs
|
1086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4866DY-T1-E3 is an N-Channel MOSFET from the TrenchFET Power MOSFETs family. It is optimized for high efficiency and fast switching, making it suitable for synchronous rectifier applications and point-of-load synchronous buck converters.
Key electrical characteristics include a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 11A at 25°C ambient temperature. The Rds On is as low as 5.5mOhm at a Vgs of 4.5V and an Id of 17A. The gate threshold voltage (Vgs(th)) is 600mV minimum at 250µA, and the maximum gate-source voltage is ±8V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a standard 8-SOIC package and is designed for surface mounting. The device is halogen-free and meets RoHS3 compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C.
Maximum 30nC at Vgs=4.5V, typical 21nC.
5.5mOhm maximum at Id=17A, Vgs=4.5V; 8mOhm maximum at Id=14A, Vgs=2.5V.
Minimum 600mV at Id=250µA.
11A at Ta=25°C, 8A at Ta=70°C.