SI4866BDY-T1-GE3 The Vishay Dale SI4866BDY-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage rating. It is supplied in an 8-SOIC package for surface mounting.
Mfr Part #:

SI4866BDY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4866BDY-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage rating. It is supplied in an 8-SOIC package for surface mounting.
✓ Total Stock: 2,289 pcs
$ Price Range: $0.99

SI4866BDY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,687 pcs
1687 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
602 pcs
602 pcs On Request 1 On Request On Request On Request On Request On Request

SI4866BDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4866BDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4866BDY-T1-GE3 is an N-Channel Power MOSFET designed for various applications including synchronous rectification and point-of-load synchronous buck converters. It features a drain-source voltage (Vds) of 12V and a maximum continuous drain current (Id) of 21.5A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 5.3mΩ maximum at 12A and 4.5V gate-source voltage. The gate charge (Qg) is 80nC maximum at 4.5V gate-source voltage, and the input capacitance (Ciss) is 5020pF maximum at 6V drain-source voltage.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, the SI4866BDY-T1-GE3 operates within a temperature range of -55°C to 150°C. It has a maximum power dissipation of 2.5W at 25°C ambient temperature and 4.45W at 25°C case temperature. The device is RoHS3 compliant and has an MSL 1 rating.

SI4866BDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4866BDY-T1-GE3 N-Channel 12V MOSFET
Subcategory: N-Channel

SI4866BDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4866BDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4866BDY-T1-GE3 Features

  • N-Channel 12V Power MOSFET
  • Low Rds(on) of 5.3mΩ maximum
  • High continuous drain current 21.5A
  • Surface mount 8-SOIC package
  • RoHS3 compliant and Halogen-free

SI4866BDY-T1-GE3 Applications

  • Synchronous rectifier in power supplies
  • Point-of-load synchronous buck converter
  • Low-voltage DC-DC conversion circuits
  • Battery-powered device power management
  • High-efficiency load switching applications

SI4866BDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4866BDY-T1-GE3?

The maximum drain-source voltage is 12V.

What is the maximum continuous drain current?

The maximum continuous drain current is 21.5A at 25°C case temperature.

What is the Rds(on) of the SI4866BDY-T1-GE3?

The Rds(on) is a maximum of 5.3mΩ at 12A and 4.5V gate-source voltage.

What is the package type for this MOSFET?

This MOSFET is supplied in an 8-SOIC package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is this MOSFET RoHS compliant?

Yes, this MOSFET is RoHS3 Compliant.

Is the SI4866BDY-T1-GE3 Halogen-free?

Yes, this MOSFET is Halogen-free.

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