| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,934 pcs
|
3934 pcs | On Request | 1 | On Request | On Request | 0636+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4860DY-T1-E3 is an N-Channel MOSFET utilizing Metal Oxide technology. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 11A. The device features a low on-state resistance of 8mOhm at 16A and 10V Vgs, with a gate charge of 18nC at 4.5V Vgs.
Designed for surface mounting, this MOSFET comes in an 8-SOIC package. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.6W. The gate-source voltage (Vgs) maximum is ±20V, and the threshold voltage (Vgs(th)) is 1V at 250µA.
This component is suitable for various electronic switching applications where efficient power management is required. Its specifications make it a reliable choice for designs needing robust performance in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 11A.
The Rds On is a maximum of 8mOhm at 16A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The SI4860DY-T1-E3 is available in an 8-SOIC package for surface mounting.