| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI4858DY-T1-GE3 is a single N-Channel MOSFET from Vishay Intertechnology, Inc. This component features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at ambient temperature. Its on-resistance (Rds On) is a maximum of 5.25mOhm at 20A and 10V gate drive voltage.
Designed for surface mounting, the MOSFET is housed in an 8-SOIC package measuring 0.154 inches (3.90mm) in width. The operating temperature range is from -55°C to 150°C (TJ). Key electrical characteristics include a gate charge of 40 nC at 4.5V Vgs and a gate threshold voltage of 1V at 250µA. The maximum power dissipation is rated at 1.6W at ambient temperature.
This MOSFET utilizes Metal Oxide technology and has a maximum gate-to-source voltage of ±20V. It is suitable for various electronic applications requiring efficient switching and power control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 13A at ambient temperature.
The operating temperature range is -55°C to 150°C (TJ).
It is in an 8-SOIC (0.154", 3.90mm Width) package.
It is designed for surface mount.