| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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602,667 pcs
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602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4858DY-T1-E3 from Vishay Siliconix is a single N-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 13A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 5.25mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer.
This device utilizes MOSFET (Metal Oxide) technology and operates within a temperature range of -55°C to 150°C. The gate charge (Qg) is a maximum of 40 nC at 4.5V Vgs, and the gate threshold voltage (Vgs(th)) is 1V at 250µA. The maximum gate-source voltage is ±20V.
The SI4858DY-T1-E3 is supplied in an 8-SOIC package, suitable for surface mounting. Its power dissipation is rated at a maximum of 1.6W at 25°C ambient temperature. The part is compliant with RoHS3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction temperature).
13A at Ta=25°C.
5.25mOhm at Vgs=10V, Id=20A.
40nC at Vgs=4.5V.
N-Channel.