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856 pcs
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856 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Vishay Si4856ADY-T1-E3 is a discrete N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 11A. The on-resistance (Rds(On)) is specified as 0.018 Ω at 10V gate-source voltage, indicating efficient power handling.
This MOSFET is housed in a compact SOIC-8 surface-mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C, ensuring reliability in diverse environmental conditions. The part is listed as RoHS3 Compliant, REACH Unaffected, and Moisture Sensitivity Level 1 Unlimited.
Key electrical parameters include a 30V Vds and 11A Id. The low Rds(On) of 0.018 Ω at 10V is beneficial for reducing power loss in switching and linear applications. Its surface-mount SOIC-8 package facilitates automated assembly processes.
The drain-source voltage (Vds) is 30 V.
The continuous drain current (Id) is 11 A.
The on-resistance (Rds(On)) is 0.018 Ω at 10V.
The operating temperature range is -55°C to 150°C.
The Si4856ADY-T1-E3 is supplied in the SOIC-8 package.
The RoHS status is RoHS3 Compliant.