SI4856ADY-T1-E3 The Vishay Si4856ADY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous drain current. It is supplied in a surface-mount SOIC-8 package.
Mfr Part #:

SI4856ADY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Si4856ADY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous drain current. It is supplied in a surface-mount SOIC-8 package.
✓ Total Stock: 210,000 pcs
$ Price Range: $2.81

SI4856ADY-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,000 pcs
200000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request 0816+ On Request On Request

SI4856ADY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
SVHC Present
Tape & Reel

SI4856ADY-T1-E3 Description

Short technical summary and product information.

The Vishay Si4856ADY-T1-E3 is a discrete N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 11A, indicating its capability to handle moderate power loads.

 

The MOSFET exhibits a low on-resistance (Rds(On)) of 0.018 Ohms at 10V gate-source voltage, which contributes to efficient power transfer and reduced heat generation during operation. The operating temperature range is specified from -55°C to 150°C, making it suitable for environments with varying thermal conditions.

 

This component is packaged in a standard SOIC-8 surface-mount form factor, facilitating integration onto printed circuit boards using automated assembly processes. The surface-mount design is common in compact electronic devices and systems where space efficiency is crucial.

SI4856ADY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Si4856ADY-T1-E3 N-Channel MOSFET
Subcategory: Discrete Semiconductor

SI4856ADY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4856ADY-T1-E3 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4856ADY-T1-E3 Features

  • N-Channel MOSFET for power switching.
  • 30V drain-source voltage rating.
  • 11A continuous drain current.
  • Low 0.018 Ohm on-resistance.
  • Surface mount SOIC-8 package.

SI4856ADY-T1-E3 Applications

  • Suitable for power management circuits.
  • Used in DC-DC converters.
  • Ideal for load switching applications.
  • Applicable in battery-powered devices.

SI4856ADY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vds) of the SI4856ADY-T1-E3?

30 V.

What is the continuous drain current (Id) rating?

11 A.

What is the typical on-resistance (Rds(on))?

0.018 Ω at 10 V gate drive.

What is the operating temperature range?

-55°C to 150°C.

What package is the SI4856ADY-T1-E3 available in?

SOIC-8 surface mount package.

What is the mounting type?

Surface Mount.

What packaging is used?

Tape and Reel.

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