SI4848DY-T1-GE3 The Vishay Dale SI4848DY-T1-GE3 is an N-Channel MOSFET with a drain-to-source voltage of 150V and a continuous drain current of 2.7A. It features a low on-resistance of 85mOhm at 10V gate-source voltage.
Mfr Part #:

SI4848DY-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4848DY-T1-GE3 is an N-Channel MOSFET with a drain-to-source voltage of 150V and a continuous drain current of 2.7A. It features a low on-resistance of 85mOhm at 10V gate-source voltage.
✓ Total Stock: 96,412 pcs
$ Price Range: $0.99

SI4848DY-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI4848DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4848DY-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI4848DY-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It offers a high drain-to-source voltage rating of 150V and can handle a continuous drain current of up to 2.7A under typical conditions.

 

The MOSFET exhibits a maximum on-resistance of 85mOhm when driven at 10V gate-source voltage and 3.5A drain current. Its gate threshold voltage is a minimum of 2V at 250µA. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, this component is suitable for integration into compact circuit designs. The technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

 

Key electrical characteristics include a maximum gate-to-source voltage of ±20V and a gate charge of 21nC at 10V. The maximum power dissipation is rated at 1.5W under ambient temperature conditions.

SI4848DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4848DY-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI4848DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4848DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4848DY-T1-GE3 Features

  • 150V drain-to-source voltage rating.
  • 2.7A maximum continuous drain current.
  • 85mOhm maximum on-resistance.
  • Surface mount 8-SOIC package.
  • Wide operating temperature range.

SI4848DY-T1-GE3 Applications

  • Used in DC-DC converter circuits.
  • Ideal for load switching applications.
  • Suitable for power management in portable devices.
  • Applied in battery protection circuits.

SI4848DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

150V.

What is the continuous drain current rating?

2.7A at ambient temperature.

What is the on-resistance?

85mOhm maximum at Id=3.5A and Vgs=10V.

What is the gate charge?

21nC maximum at Vgs=10V.

What is the gate threshold voltage?

2V minimum at Id=250µA.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface-mount.

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