| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90,400 pcs
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90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The SI4848DY is an N-Channel power MOSFET designed for a wide range of switching applications. It features a maximum drain-source voltage of 150V and a continuous drain current of 3.7A at 25°C, with reduced ratings at elevated temperatures. The device also supports a pulsed drain current of 25A and an avalanche current of 10A, making it suitable for robust power management.
Electrical characteristics include a gate-source voltage rating of ±20V and a typical gate threshold voltage of 2.0V. The maximum power dissipation is 3.0W at 25°C ambient, derated to 1.9W at 70°C. The device operates over a junction temperature range of -55°C to 150°C, ensuring reliability in demanding environments.
Thermal performance is defined by a junction-to-ambient thermal resistance of 42°C/W for short-duration pulses (≤10s) and 82°C/W under steady-state conditions. The junction-to-foot thermal resistance is 23°C/W, aiding in heat sink design. The MOSFET's specifications support its use in power conversion, load switching, and other high-efficiency circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150V.
The continuous drain current is 3.7A at 25°C ambient.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum power dissipation is 3.0W at 25°C ambient.
The typical gate threshold voltage is 2.0V with VDS=VGS and ID=250µA.