SI4842BDY-T1-GE3 The Vishay Dale SI4842BDY-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 28A.
Mfr Part #:

SI4842BDY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4842BDY-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 28A.
✓ Total Stock: 2,500 pcs
$ Price Range: $0.99

SI4842BDY-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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SI4842BDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4842BDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4842BDY-T1-GE3 is a single N-Channel MOSFET from the Metal Oxide technology family. It is designed for power switching applications, offering a drain-source voltage (Vdss) of 30V and a continuous drain current of 28A at a case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 4.2mOhm at 20A and 10Vgs, and a gate charge (Qg) of 100nC at 10Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, with a maximum gate-source voltage of ±20V.

 

This MOSFET is housed in an 8-SOIC package with a surface mount type, making it suitable for various PCB designs. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 3W (ambient) or 6.25W (case).

 

The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI4842BDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4842BDY-T1-GE3 N-Channel MOSFET
Subcategory: Single

SI4842BDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4842BDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4842BDY-T1-GE3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 28A.
  • Low on-resistance of 4.2mOhm at 20A.
  • Surface mount 8-SOIC package.
  • RoHS3 compliant.

SI4842BDY-T1-GE3 Applications

  • Used in DC-DC converter circuits
  • Suitable for power management in portable devices
  • Ideal for low-voltage load switching
  • Common in battery protection applications

SI4842BDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4842BDY-T1-GE3?

The drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current of the SI4842BDY-T1-GE3?

The continuous drain current is 28A.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 4.2mOhm when measured at 20A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What type of package is the SI4842BDY-T1-GE3 in?

It is in an 8-SOIC package with a surface mount type.

Is the SI4842BDY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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