| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,111 pcs
|
4111 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Vishay Dale SI4840DY-T1-E3 is a single N-Channel MOSFET with a drain-to-source voltage rating of 40V. It offers a maximum continuous drain current of 10A at ambient temperature and a low on-resistance of 9mOhm at 14A and 10V gate drive.
This MOSFET utilizes Metal Oxide Semiconductor technology and is suitable for applications requiring efficient power switching. The gate charge is 28nC at 5V gate-source voltage, and the gate threshold voltage is a maximum of 3V at 250µA.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, it is designed for surface mounting. The operating temperature range is from -55°C to 150°C (TJ). The maximum power dissipation is 1.56W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
8-SOIC surface-mount package.
-55°C to 150°C.
9mOhm at 14A and 10V gate drive.
3V at 250µA drain current.
10A at ambient temperature.
28nC at 5V gate-source voltage.