| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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75,000 pcs
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75000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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16,020 pcs
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16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,667 pcs
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3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,110 pcs
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2110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,782 pcs
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1782 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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277 pcs
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277 pcs | On Request | 1 | On Request | On Request | 0943+ | On Request | On Request | |
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109 pcs
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109 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4840BDY-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 19A at 25°C case temperature.
The MOSFET has a low on-resistance of 9mOhm at 12.4A and 10V Vgs, and 0.012 Ohm at Vgs = 4.5V. It is suitable for synchronous rectification and Power over Line (PoL) applications, particularly on the secondary side.
This component is housed in an 8-SOIC package and is designed for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is rated for 2.5W power dissipation at 25°C ambient temperature and 6W at 25°C case temperature.
Key electrical characteristics include a gate charge of 50nC at 10V Vgs and an input capacitance of 2000pF at 20V Vds. The device is also tested for 100% Rg and UIS.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 19A at 25°C case temperature.
The Rds On (Max) is 9mOhm at 12.4A drain current and 10V gate-source voltage.
This MOSFET is supplied in an 8-SOIC package designed for surface mounting.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, this product is RoHS3 Compliant.