| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75,000 pcs
|
75000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,804 pcs
|
1804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,036 pcs
|
1036 pcs | On Request | 1 | On Request | On Request | 1038+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Transistor Type | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4840BDY-T1-E3 is a single N-Channel MOSFET designed for power applications. It offers a 40V drain-source breakdown voltage and a maximum continuous drain current of 19A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 9mOhm at 10V gate-source voltage and 12.4A drain current, and a maximum gate charge of 50nC at 10V. The device operates within a junction temperature range of -55°C to 150°C.
This MOSFET is housed in an 8-SOIC package, suitable for surface mounting. Its applications include synchronous rectification and secondary side power applications like POL and IBC.
The device is built using TrenchFET® technology and is 100% Rg and UIS tested. It is available in lead (Pb)-free and halogen-free options.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 19A at 25°C case temperature.
The typical on-resistance at Vgs = 10V is 9mOhm.
The operating junction and storage temperature range is -55°C to 150°C.
It is available in an 8-SOIC package.