| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,036 pcs
|
1036 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4838DY-T1-E3 from Vishay Dale is a high-performance N-Channel MOSFET designed for various power switching applications. It offers a drain-source voltage (Vdss) of 12V and can handle a continuous drain current (Id) of 17A at ambient temperature.
This MOSFET features a low on-resistance (Rds On) of 3mOhm at 25A and 4.5V gate-source voltage, ensuring efficient power transfer. The gate charge (Qg) is 60 nC at 4.5V, and the gate threshold voltage (Vgs(th)) is 600mV at 250µA. The maximum gate-source voltage is ±8V.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the SI4838DY-T1-E3 operates within an ambient temperature range of -55°C to 150°C. Its maximum power dissipation is rated at 1.6W at ambient temperature. This component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 12V.
The continuous drain current is 17A at ambient temperature (Ta).
The maximum on-resistance is 3 mOhm at 25A and 4.5V gate drive.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC surface-mount package with a width of 3.90mm.
The maximum gate threshold voltage is 600mV at 250µA.
The maximum gate charge is 60 nC at 4.5V.