SI4838BDY-T1-GE3 The Vishay Dale SI4838BDY-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 34A. It features TrenchFET power MOSFET technology.
Mfr Part #:

SI4838BDY-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4838BDY-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 34A. It features TrenchFET power MOSFET technology.
✓ Total Stock: 64,671 pcs
$ Price Range: $0.99

SI4838BDY-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI4838BDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4838BDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4838BDY-T1-GE3 is a single N-Channel MOSFET designed for low VIN DC/DC applications. It utilizes TrenchFET power MOSFET technology, offering a drain-source voltage of 12V and a maximum continuous drain current of 34A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 2.7 mOhm at 15A and 4.5V Vgs, and a gate threshold voltage of 1V at 250µA. The device has a gate charge of 84 nC maximum at 4.5V Vgs and an input capacitance of 5760 pF maximum at 6V Vds.

 

This MOSFET is housed in an 8-SOIC package and is suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is also RoHS and halogen-free compliant.

 

Applications include low VIN DC/DC conversion. The MOSFET is 100% Rg and UIS tested, ensuring reliability for demanding applications.

SI4838BDY-T1-GE3 Quick Information

Product Type: MOSFET
Series: SI4838BDY
Canonical Name: Vishay Dale SI4838BDY-T1-GE3 N-Channel 12V MOSFET
Subcategory: N-Channel

SI4838BDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4838BDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4838BDY-T1-GE3 Features

  • N-Channel 12V MOSFET
  • TrenchFET power MOSFET technology
  • 34A continuous drain current
  • Low Rds On: 2.7mOhm at 15A, 4.5V
  • 8-SOIC surface mount package

SI4838BDY-T1-GE3 Applications

  • Suitable for low VIN DC/DC
  • Power management circuits
  • Switching power supplies
  • Battery powered devices

SI4838BDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

12 V minimum at 250 µA drain current.

What is the package type?

8-SOIC (SO-8) surface mount package.

What is the operating temperature range?

-55°C to +150°C.

What is the on-resistance?

2.7 mOhm maximum at 15A drain current and 4.5V gate drive.

What is the gate threshold voltage?

1V maximum at 250 µA drain current.

What is the continuous drain current?

34A at case temperature 25°C.

What is the gate charge?

84 nC maximum at 4.5V gate voltage.

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