| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
448 pcs
|
448 pcs | On Request | 1 | On Request | On Request | 0815+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number SI4836DY-T1-E3 from Vishay Dale, is designed for various electronic applications. It operates with a drain-source voltage (Vdss) of 12V and can handle a continuous drain current (Id) of 17A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 3mOhm at 25A and 4.5V gate-source voltage, ensuring efficient power transfer.
With a gate charge (Qg) of 75 nC at 4.5V, the device is suitable for switching applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.6W (Ta). The gate threshold voltage (Vgs(th)) is 400mV at 250µA, and the maximum gate-source voltage (Vgs) is ±8V. The drive voltage required for maximum Rds On is 1.8V, and for minimum Rds On is 4.5V.
The SI4836DY-T1-E3 is housed in an 8-SOIC package and is designed for surface mounting. The package dimensions are 0.154" (3.90mm) in width. It is supplied on tape and reel for automated assembly processes. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the SI4836DY-T1-E3 is 12V.
The continuous drain current rating is 17A at 25°C ambient temperature.
The maximum on-resistance is 3mOhm when measured at 25A drain current and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
This MOSFET is designed for surface mounting.
It is supplied in an 8-SOIC package.
The SI4836DY-T1-E3 is RoHS3 compliant.