| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
241,067 pcs
|
241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,039 pcs
|
9039 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
3,604 pcs
|
3604 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4835BDY-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It offers a drain-source voltage of 30V and can handle a continuous drain current of 7.4A at ambient temperature. The MOSFET exhibits a low on-resistance of 18mOhm when driven at 10V and drawing 9.6A.
Key electrical characteristics include a gate threshold voltage of 3V at 250µA and a maximum gate-source voltage of ±25V. The device operates within a temperature range of -55°C to 150°C. It is packaged in an 8-SOIC form factor, suitable for compact designs.
The SI4835BDY-T1-E3 is constructed using MOSFET technology and is RoHS3 compliant. Its moisture sensitivity level is rated as 1, indicating unlimited usability under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
18mOhm maximum at Id=9.6A, Vgs=10V.
7.4A at ambient temperature (Ta).
-55°C to 150°C (junction).
8-SOIC (0.154", 3.90mm Width) surface mount.
3V maximum at Id=250µA.
±25V.