| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,437 pcs
|
2437 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4834CDY-T1-E3 is a dual N-channel MOSFET designed for logic dc-to-dc and low current dc-to-dc applications. It features a 30V drain-source breakdown voltage and a continuous drain current of 8A at 25°C case temperature. The Rds(on) is specified as a maximum of 20mOhm at 8A and 10V gate-source voltage.
This MOSFET includes an integrated Schottky diode. It operates over a temperature range of -55°C to 150°C (TJ) and is housed in a standard 8-SOIC package suitable for surface mounting. The device offers a maximum power dissipation of 2.9W at 25°C case temperature.
Key electrical characteristics include a gate threshold voltage of 1V to 3V at 1mA and an input capacitance of 950pF at 15V. The device is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 8A.
The Rds On is a maximum of 20mOhm at 8A and 10V.
The operating temperature range is -55°C to 150°C.
The package type is 8-SOIC.
Yes, this product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.