SI4831DY-T1-E3 The Vishay Dale SI4831DY-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 5A. It features a low Rds On of 45mOhm at 10V gate drive.
Mfr Part #:

SI4831DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4831DY-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 5A. It features a low Rds On of 45mOhm at 10V gate drive.
✓ Total Stock: 975 pcs
$ Price Range: $0.99

SI4831DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
975 pcs
975 pcs On Request 1 On Request On Request On Request On Request On Request

SI4831DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4831DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4831DY-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 5A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum drain-source on-resistance (Rds On) of 45mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 5A. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. The device also incorporates a Schottky diode with an average forward current rating of 3A.

 

This MOSFET is housed in an 8-SOIC package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device has a gate-source voltage limit of ±20V and a gate charge of 20 nC at 5V.

 

Environmental compliance includes RoHS3 compliance and an MSL rating of 1.

SI4831DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30V MOSFET with Schottky Diode
Subcategory: P-Channel

SI4831DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4831DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4831DY-T1-E3 Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current up to 5A.
  • Low Rds On of 45mOhm at 10V Vgs.
  • Integrated Schottky diode for protection.
  • Surface mount 8-SOIC package.

SI4831DY-T1-E3 Applications

  • Suitable for power switching circuits.
  • Used in general purpose amplification.
  • Ideal for battery management systems.
  • Applicable in low-voltage power supplies.

SI4831DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI4831DY-T1-E3?

The drain-source voltage rating is 30V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 5A at 25°C ambient temperature.

What is the Rds On of the SI4831DY-T1-E3 at 10V gate drive?

The Rds On is a maximum of 45mOhm at 5A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What is the package type for the SI4831DY-T1-E3?

It is supplied in an 8-SOIC package for surface mounting.

Is the SI4831DY-T1-E3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

Home
Account

Categories