SI4830ADY-T1-E3

The SI4830ADY-T1-E3 is a dual N-channel MOSFET array manufactured by Vishay Dale. Designed for high-efficiency switching applications, this component integrates two independent N-channel MOSFETs within a single 8-SOIC surface-mount package. The half-bridge configuration simplifies circuit layout and reduces board space requirements.

Electrical characteristics include a maximum drain-to-source voltage of 30V and a gate-source voltage rating of ±20V. At an ambient temperature of 25°C, the device supports a continuous drain current of 7.5A, dropping to 6.0A at 70°C. A pulsed drain current capability of 30A allows for handling transient loads. The on-state resistance is specified at a maximum of 0.022Ω at 10V gate drive and 7.5A drain current, ensuring low conduction losses.

Logic level gate drive functionality enables direct interfacing with standard microcontrollers and digital logic without requiring additional gate drivers. Total gate charge is rated at 11nC at 4.5V, facilitating fast switching speeds. The component operates reliably across a wide junction and storage temperature range from -55°C to 150°C. Maximum power dissipation reaches 2.0W at 25°C ambient temperature, with thermal resistance values of 110°C/W steady state junction-to-ambient and 40°C/W junction-to-foot.

This MOSFET array is suitable for DC-DC converters, motor control circuits, and power management systems where compact packaging and efficient switching are critical. The halogen-free construction meets environmental standards for modern electronics manufacturing.