| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
388 pcs
|
388 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4825DDY-T1-GE3 from Vishay Siliconix is a P-Channel TrenchFET power MOSFET. It is designed for load switching and power adapter switching applications, particularly in laptops.
Key electrical specifications include a maximum drain-source voltage (Vds) of 30V and a continuous drain current of 10.9A. The on-resistance (Rds On) is rated at a maximum of 12.5mOhm at 10A and 10V gate-source voltage. Input capacitance (Ciss) is 2550 pF at 15V, and gate charge (Qg) is a maximum of 86 nC at 10V. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a surface-mount SOIC-8 package. The part is RoHS Compliant and Lead Free.
Applications include power management and industrial uses where efficient switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
10.9 A at case temperature (Tc).
12.5 mOhm maximum.
SOIC-8 surface mount package.
-55°C to 150°C.
86 nC maximum.
2550 pF maximum.