| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1107+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4823DY-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 20V and can handle a continuous drain current of up to 4.1A at 25°C case temperature. The MOSFET exhibits a low on-state resistance of 108mΩ at a gate-source voltage of -4.5V and a drain current of -3.3A.
This component integrates a Schottky Diode, providing enhanced performance characteristics. It operates within a temperature range of -55°C to 150°C (TJ) and is housed in a compact 8-SOIC package suitable for surface mounting.
Key electrical parameters include a gate charge of 12nC (max) at 10V and an input capacitance of 660pF (max) at 10V. The maximum power dissipation is rated at 1.7W (Ta) and 2.8W (Tc). The device is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
Ideal for portable devices and boost/buck circuits, the SI4823DY-T1-E3 is a versatile component for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum gate-source voltage is ±12V.
The on-state resistance is a maximum of 108mΩ at a drain current of 3.3A and a gate-source voltage of -4.5V.
The continuous drain current is 4.1A at a case temperature of 25°C.
The operating junction and storage temperature range is -55°C to 150°C.
It is in an 8-SOIC package.
Yes, it is RoHS3 Compliant.