| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
430 pcs
|
430 pcs | On Request | 1 | On Request | On Request | 2014+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4818DY-T1-E3 is a dual N-channel MOSFET designed for various electronic applications. This component features a 30V drain-source voltage rating and a low on-resistance of 0.022 Ohms at 6.3A and 10V gate-source voltage. It also includes an integrated Schottky diode for enhanced performance.
The MOSFET is housed in an 8-SOIC package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a continuous drain current of up to 7A and a gate charge of 12nC at 5V.
This device is compliant with RoHS directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The SI4818DY-T1-E3 is designed for applications requiring efficient power switching and control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
6.3 A at 25°C ambient.
22 mOhm at Vgs=10V, Id=6.3A.
8-SOIC surface mount package.
-55°C to 150°C.
Yes, it has a logic-level gate.
1.4 W at 25°C ambient.