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SI4816DY-T1-E3 The Vishay Dale SI4816DY-T1-E3 is a Dual N-Channel MOSFET with a 30V drain-source voltage rating. It features a surface mount 8-SOIC package and a maximum on-resistance of 22mOhm.
Mfr Part #:

SI4816DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4816DY-T1-E3 is a Dual N-Channel MOSFET with a 30V drain-source voltage rating. It features a surface mount 8-SOIC package and a maximum on-resistance of 22mOhm.
✓ Total Stock: 1,412 pcs
$ Price Range: $0.99

SI4816DY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,412 pcs
On Request
1412 pcs On Request 1 On Request On Request 11+ On Request On Request
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SI4816DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SI4816DY-T1-E3 Description

Short technical summary and product information.

The SI4816DY-T1-E3 from Vishay Dale is a Dual N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 5.3A. The MOSFET has a low on-resistance (Rds On) of 22mOhm at 6.3A and 10V, with a gate charge (Qg) of 12nC at 5V.

 

This component operates within a temperature range of -55°C to 150°C (TJ) and features a logic level gate. It is housed in a compact 8-SOIC surface mount package, measuring 0.154 inches in width. The device is suitable for applications requiring efficient switching and power management.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V at 250µA and a maximum power dissipation of 1.25W. The dual N-channel configuration makes it versatile for half-bridge applications. Its surface mount design facilitates integration into printed circuit boards.

SI4816DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 30V MOSFET with Schottky Diode
Subcategory: Arrays

SI4816DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4816DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4816DY-T1-E3 Features

  • Dual N-Channel MOSFET technology.
  • 30V drain-to-source voltage rating.
  • 5.3A continuous drain current.
  • Low 22mOhm on-resistance.
  • Surface mount 8-SOIC package.

SI4816DY-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for half-bridge configurations.
  • Used in general electronic designs.
  • Efficient for low-voltage applications.

SI4816DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4816DY-T1-E3?

The drain-to-source voltage (Vdss) for the SI4816DY-T1-E3 is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 5.3A, with a secondary rating of 7.7A.

What is the on-resistance of the SI4816DY-T1-E3?

The on-resistance (Rds On) is a maximum of 22mOhm when measured at 6.3A and 10V.

What is the operating temperature range?

The operating temperature range is from -55°C to 150°C (TJ).

What type of package is the SI4816DY-T1-E3 in?

The SI4816DY-T1-E3 is in an 8-SOIC package.

Is the SI4816DY-T1-E3 RoHS compliant?

The SI4816DY-T1-E3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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