SI4816BDY-T1-GE3 The Vishay Dale SI4816BDY-T1-GE3 is a dual N-channel MOSFET featuring a 30V drain-source voltage and a surface mount 8-SOIC package. It offers low on-state resistance and logic-level gate operation.
Mfr Part #:

SI4816BDY-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4816BDY-T1-GE3 is a dual N-channel MOSFET featuring a 30V drain-source voltage and a surface mount 8-SOIC package. It offers low on-state resistance and logic-level gate operation.
✓ Total Stock: 161,090 pcs
$ Price Range: $0.99

SI4816BDY-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI4816BDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI4816BDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4816BDY-T1-GE3 is a dual N-channel MOSFET designed for various electronic applications. It features a drain-source voltage of 30V and a continuous drain current of up to 5.8A for Channel-1 and 8.2A for Channel-2. The MOSFET exhibits low on-state resistance, with a maximum of 18.5mΩ at 6.8A and 10V for Channel-1, and 11.5mΩ at 11.4A and 10V for Channel-2.

 

This device is housed in a compact 8-SOIC package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C and features logic-level gate operation, making it versatile for different circuit designs. The MOSFET also includes an integrated Schottky diode.

 

Key electrical characteristics include a gate threshold voltage of 3V maximum at 250µA and a total gate charge of 10nC at 5V. The maximum power dissipation is rated at 1.25W at 25°C ambient temperature. The device is RoHS3 compliant and Halogen-free.

SI4816BDY-T1-GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel 30V MOSFET with Schottky Diode
Subcategory: Arrays

SI4816BDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4816BDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4816BDY-T1-GE3 Features

  • Dual N-Channel MOSFET with Schottky Diode
  • 30V Drain-Source Voltage Rating
  • Low On-State Resistance
  • Logic Level Gate Operation
  • Surface Mount 8-SOIC Package

SI4816BDY-T1-GE3 Applications

  • Suitable for power switching applications
  • Ideal for battery-powered devices
  • Used in DC-DC converters
  • Applicable in load switch circuits

SI4816BDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4816BDY-T1-GE3?

The drain-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 5.8A for Channel-1 and 8.2A for Channel-2.

What is the Rds On (Max) at 6.8A and 10V?

The Rds On (Max) at 6.8A and 10V is 18.5mΩ.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What is the package type?

The package type is 8-SOIC.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

Is this product Halogen-free?

Yes, this product is Halogen-free.

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