SI4816BDY-T1-E3 The Vishay Dale SI4816BDY-T1-E3 is a dual N-Channel MOSFET array with a 30V drain-source voltage rating. It features a low on-state resistance and is housed in an 8-SOIC package.
Mfr Part #:

SI4816BDY-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4816BDY-T1-E3 is a dual N-Channel MOSFET array with a 30V drain-source voltage rating. It features a low on-state resistance and is housed in an 8-SOIC package.
✓ Total Stock: 95,144 pcs
$ Price Range: $0.99

SI4816BDY-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI4816BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI4816BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4816BDY-T1-E3 is a dual N-Channel MOSFET array designed for power management applications. It offers a 30V drain-source voltage and a continuous drain current of up to 6.8A for Channel-1 and 8.2A for Channel-2 at 25°C.

 

Key electrical characteristics include a maximum on-state resistance of 18.5mΩ at 6.8A and 10V Vgs for Channel-1, and a maximum gate charge of 10nC at 5V Vgs. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET array is suitable for various applications requiring efficient switching and power control. It is available in a compact 8-SOIC surface-mount package, facilitating integration into space-constrained designs.

SI4816BDY-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel 30V MOSFET with Schottky Diode
Subcategory: N-Channel

SI4816BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4816BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4816BDY-T1-E3 Features

  • Dual N-Channel MOSFET array.
  • 30V drain-source voltage rating.
  • Up to 6.8A/8.2A continuous drain current.
  • Low 18.5mΩ max Rds On.
  • Surface mount 8-SOIC package.

SI4816BDY-T1-E3 Applications

  • Half-bridge DC-DC converter circuits
  • Battery management system switching
  • Motor drive body diode commutation
  • Load switching with Schottky bypass

SI4816BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4816BDY-T1-E3?

The drain-source voltage is 30V.

What is the maximum continuous drain current for the SI4816BDY-T1-E3?

The continuous drain current is 6.8A for Channel-1 and 8.2A for Channel-2.

What is the Rds On (Max) for the SI4816BDY-T1-E3?

The Rds On is a maximum of 18.5mΩ at 6.8A and 10V Vgs for Channel-1.

What is the operating temperature range of the SI4816BDY-T1-E3?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4816BDY-T1-E3 available in?

The SI4816BDY-T1-E3 is available in an 8-SOIC package.

Is the SI4816BDY-T1-E3 RoHS compliant?

Yes, the SI4816BDY-T1-E3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4816BDY-T1-E3?

The Moisture Sensitivity Level is 1 Unlimited.

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