| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,703 pcs
|
1703 pcs | On Request | 1 | On Request | On Request | 713 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4814BDY-T1-E3 is a dual N-channel MOSFET featuring a 30V drain-source voltage rating and an integrated Schottky diode. This component is designed for efficient power management applications.
Key electrical specifications include a maximum continuous drain current of 10A for Channel-1 and 10.5A for Channel-2 at 25°C case temperature. The drain-source on-state resistance (Rds(on)) is as low as 0.018 Ohms at 10A and 10V Vgs. The gate threshold voltage (Vgs(th)) is typically 1.5V, with a maximum of 3V at 250µA, and it supports logic-level gate drive.
The MOSFET is housed in an 8-SOIC package, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ). The device also features a Schottky diode with a forward voltage of 0.50V at 1.0A.
This component is suitable for applications such as ADC/DC converters and notebook power management. It is available in a lead-free, halogen-free version (Si4814BDY-T1-GE3).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The maximum continuous drain current is 10A for Channel-1 and 10.5A for Channel-2 at TC = 25°C.
The Rds(on) is a maximum of 0.018 Ohms at 10A drain current and 10V gate-source voltage.
The SI4814BDY-T1-E3 is available in an 8-SOIC package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the SI4814BDY-T1-E3 features a logic-level gate.