| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
910 pcs
|
910 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4812BDY-T1-E3 is an N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 7.3A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 16mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 9.5A. It also includes an integrated Schottky diode with a forward voltage of 0.50V at 1.0A.
This device operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package, suitable for surface mounting. The maximum power dissipation is rated at 1.4W at 25°C ambient temperature. The SI4812BDY-T1-E3 is specified with a gate charge of 13nC at 5V Vgs and a gate threshold voltage of 3V at 250µA Id.
This MOSFET is suitable for various switching and power management applications where efficient power control is required. Its compact 8-SOIC package facilitates integration into space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 7.3A at 25°C ambient temperature.
The Rds On is a maximum of 16mOhm at 9.5A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in an 8-SOIC package for surface mounting.
Yes, it includes an integrated Schottky diode with a forward voltage of 0.50V at 1.0A.