SI4808DY-T1-E3 The Vishay Dale SI4808DY-T1-E3 is a Dual N-Channel MOSFET with an integrated Schottky Diode. It offers a 30V drain-source voltage and a continuous drain current of 5.7A.
Mfr Part #:

SI4808DY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4808DY-T1-E3 is a Dual N-Channel MOSFET with an integrated Schottky Diode. It offers a 30V drain-source voltage and a continuous drain current of 5.7A.
✓ Total Stock: 301,004 pcs
$ Price Range: $0.99

SI4808DY-T1-E3 Available from 2 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
301,000 pcs
301000 pcs On Request 1 On Request On Request On Request On Request On Request
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4 pcs
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SI4808DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI4808DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4808DY-T1-E3 is a Dual N-Channel MOSFET featuring an integrated Schottky Diode, designed for various electronic applications. This component boasts a 30V drain-source voltage (Vds) and a continuous drain current (Id) of 5.7A at 25°C.

 

Key electrical characteristics include a low on-state resistance (Rds(on)) of 0.022 Ohms at 7.5A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 800mV maximum at 250µA. The device also features a logic level gate, making it suitable for a wider range of driving voltages.

 

Packaged in an 8-SOIC surface mount configuration, the SI4808DY-T1-E3 operates within a temperature range of -55°C to 150°C. It is compliant with RoHS and Halogen-free standards, indicating its suitability for environmentally conscious designs. The MOSFET also includes dynamic characteristics such as gate charge and rise/fall times, important for switching performance.

 

This component is well-suited for power management applications where efficient switching and low on-resistance are critical. Its dual-channel configuration and integrated diode offer design flexibility and space savings in compact electronic systems.

SI4808DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Subcategory: Arrays

SI4808DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4808DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4808DY-T1-E3 Features

  • Dual N-Channel MOSFET with Schottky Diode.
  • 30V Drain-Source Voltage rating.
  • 5.7A Continuous Drain Current.
  • Low 0.022 Ohm On-State Resistance.
  • Logic Level Gate capability.

SI4808DY-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for battery-powered devices.
  • Used in DC-DC converters.
  • Applicable in load switching circuits.

SI4808DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4808DY-T1-E3?

The maximum drain-source voltage is 30V.

What is the continuous drain current of the SI4808DY-T1-E3?

The continuous drain current is 5.7A at 25°C.

What is the typical Rds(on) for the SI4808DY-T1-E3?

The Rds(on) is 0.022 Ohms at 7.5A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI4808DY-T1-E3 in?

It is in an 8-SOIC package for surface mounting.

Is the SI4808DY-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Does the SI4808DY-T1-E3 meet Halogen-free requirements?

Yes, it is Halogen-free.

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