| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
465 pcs
|
465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
257 pcs
|
257 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4804CDY-T1-GE3 is a dual N-channel MOSFET belonging to the Transistors - FETs, MOSFETs - Arrays category. This component features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous current of 8A.
Key electrical characteristics include a maximum on-resistance (Rds On) of 22mOhm at 7.5A and 10V, a gate charge (Qg) of 23nC at 10V, and a gate threshold voltage (Vgs(th)) of 2.4V at 250µA. The device has an input capacitance (Ciss) of 865pF at 15V and a power dissipation rating of 3.1W.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package and utilizes Surface Mount technology for integration into electronic circuits. The dual N-channel configuration makes it suitable for applications requiring complementary switching or higher current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The SI4804CDY-T1-GE3 has a continuous current rating of 8A.
The maximum on-resistance (Rds On) is 22mOhm when measured at 7.5A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
This component is designed for Surface Mount.